Most electronics systems today rely on MOSFETs. Compared to traditional bipolar transistors, they need almost no input current to control the load current. However, they have a short life and high susceptibility to overload voltage. Newer materials are offering significant improvements over silicon-based devices, giving lower losses and higher speeds as well as lower costs. These new materials include silicon-carbide (SiC) and gallium-nitride (GaN). Here, the test implications are discussed.