Toshiba develops one of the first 48-layer BiCS

31 March 2015

Toshiba announces the development of one of the first 48-layer three dimensional stacked cell structure flash memory called BiCS.

A 2-bit-per-cell 128-gigabit (16 gigabytes) device, sample shipments of products using the new process technology has already started. 


The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily solid state drives (SSD). 


Since making one of the first announcements of technology for 3D Flash memory, Toshiba has continued development towards optimising mass production. To meet further market growth in 2016 and beyond, Toshiba is proactively promoting the migration to 3D Flash memory by rolling out a product portfolio that emphasises large capacity applications, such as SSD.


The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 is now under construction and will be completed in the first half of 2016, to meet growing demand for flash memory.  


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