Gen8 IGBT family delivers efficiency and ruggedness

18 November 2014

International Rectifier introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform at electronica 2014.

The Generation 8 (Gen8) 1200V IGBT platform utilised IR’s latest generation trench gate field stop technology, delivered in industry standard TO-247 packages to offer best-in-class performance for industrial and energy saving applications. 

The novel Gen8 devices are available with current ratings from eight up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and superior robustness.  

Alberto Guerra, Vice President Strategic Marketing, commented that with the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Their goal is to achieve 100 per cent inverterisation of all electric motors for a more efficient use of electric energy and a greener environment.

The new technology offers softer turn-off characteristics ideal for motor drive applications, minimising dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

Llewellyn Vaughan-Edmunds, Senior Product Marketing Manager, said IR’s Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class VCE(ON), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market. 


Pricing for the IRG8P08120KD begins at US $3.05 in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.

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