Rad-hard MOSFETs increase efficiency; reduce footprint
20 August 2013
International Rectifier launches two R8 radiation hardened (Rad-hard) power MOSFETs for space grade PoL voltage regulators.
The logic level power MOSFETs use Trench technology to offer low on-state resistance (RDS(on)) of 12?ohms (typical) and total gate charge (QG) of 18nC (typical), increasing efficiency performance by up to 6 per cent compared to existing solutions, says the company.
The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. Both devices are available in the company’s SMD 0.2 surface-mount style package, achieving a 50 pre cent space saving compared to the existing SMD 0.5 package. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.
The MOSFETs are fully characterised for radiation performance to 300krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12V. Depending on the intended design orbit and anticipated radiation environment, they may be suitable for use in applications requiring a mission life of 15 years or more, says the company.
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