Gen8 1200V IGBT technology platform

03 December 2012

IR introduced the Generation 8 (Gen8) 1200V IGBT platform that utilises IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

The novel Gen8 design allows best-in-class Vce(on)to reduce power dissipation and increase power density,and delivers superior robustness.

The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules.  The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

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