ON Semiconductor joins research program

09 October 2012

ON Semiconductor has joined the industrial research and development program at imec to develop next-generation GaN on Si power devices.

GaN is characterised by superior electron mobility, higher breakdown voltage and good thermal conductivity properties, making it ideal for power and radio frequency (RF) devices, which need high-switching efficiencies. Today, GaN-based power devices are too expensive for large volume manufacturing, as they are fabricated on small diameter wafers using non-standard production processes.

Imec’s broad-scale research program is focused on developing GaN-on-Si technology on 200 mm wafers, as well as reducing the cost and improving the performance of GaN devices. By bringing together leading integrated device manufacturers (IDMs), foundries, compound semiconductor companies, equipment suppliers and substrate suppliers, imec has been successful in achieving significant technical advancements.

Last year, imec’s research program successfully produced 200 mm GaN-on-Si wafers, bringing processing within reach for standard high-productivity 200 mm fabs. Moreover, imec developed a fabrication process compatible with standard CMOS processes and tools, the second prerequisite for cost-effective processing.


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