Diodes reduce power consumption by 40%

14 August 2012

Ultra-low IR schottky barrier diodes from ROHM prevent thermal runaway at high temperatures

Ultra-low IR schottky barrier diodes from ROHM prevent thermal runaway at high temperatures.

ROHM Semiconductor has recently announced the development of the RBxx8 series of ultra-low IR Schottky barrier diodes capable of operating at high temperatures, enabling support for automotive and power supply devices. Power consumption is reduced by approximately 40% compared to conventional automotive rectifier diodes, making them ideal for energy-saving circuits in electric vehicles (EVs) and hybrid electric vehicles (HEVs).

Rectifier and fast recovery diodes (FRDs) are commonly used in circuits for automotive and power supplies exposed to high temperature environments due their strength against thermal runaway. However, they often feature high VF, making it difficult to reduce power consumption to the levels required for EVs and HEVs. As a result, there has been an increasing demand for low-VF Schottky barrier diodes that can support operation at high temperatures.

In response to this, ROHM has utilized high temperature-resistant metals to achieve the industry’s lowest IR – approximately 100 times smaller than that of conventional SBDs, ensuring compatibility with high temperature environments.

This makes it possible to replace rectifier and fast recovery diodes with RBxx8 series SBDs, resulting in significantly improved VF characteristics (40% lower) and less heat generation, enabling smaller parts to be used – an important consideration for EVs and HEVs that demand increasing miniaturisation.

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