Monolithic design reduces EMI noise

20 April 2010

ON Semiconductor has enlarged its range of N-channel power MOSFET devices
ON Semiconductor has enlarged its range of N-channel power MOSFET devices

ON Semiconductor has enlarged its range of N-channel power MOSFET devices.

The company has introduced new 30V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2 mΩ, 3 mΩ and 5 mΩ respectively at 10V, optimised for synchronous side in buck converter applications to achieve higher power efficiency. Typical gate charge specifications of 39.6nC, 25.6nC and 12.2nC respectively (at Vgs of 4.5V) ensure that switching losses are also kept to a minimum.

Typical applications for ON Semiconductor’s new power MOSFETs include DC-DC conversion, point-of-load conversion and low side switching tasks for servers, telecom network infrastructure, PCs, notebook computers and games consoles.

“The integrated Schottky improves efficiency and waveforms by reducing dead time conduction losses facilitated by the integration into the same die as the primary FET structure,” said Paul Leonard, Vice President and General Manager of the Power MOSFET business unit at ON Semiconductor. “The new devices provide our customers with a broader array of products and solutions to solve unique design challenges.”

The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF are all offered in compact SO-8FL, 5mm x 6mm, RoHS-compliant package with low thermal resistance.


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