Forging the future

22 June 2009

TSMC reports foundry's first 28 nm low power platform technology with fully functional 64 Mb SRAM.
TSMC reports foundry's first 28 nm low power platform technology with fully functional 64 Mb SRAM.

SiON transistors optimised with strain engineering provide up to 25-40% speed improvement.

The foundry industry’s first 28 nm low power platform has been developed by extending Silicon Oxynitride (SiON)/poly usage beyond 32 nm and employing a dual/triple gate oxide process. TSMC's 28 nm low power technology provides up to 40% speed improvement or up to 50% active power reduction over its 45 nm process. TSMC is on track to deliver its 28 nm full node process technology to customers in early 2010, with options of both high performance and low power technologies.

Other characteristics from this technology include high density and low Vcc_min 6-T SRAM cells, low leakage transistors, well-proven conventional analogue/RF/electrical fuse components and low-RC Cu-low-k interconnect.

Additionally, TSMC report good 64 Mb SRAM functional yield with a competitive cell size of 0.127 μm², and a raw gate density as high as 3900 kGate/mm² in this 28 nm dual/triple gate oxide SoC technology. Good SRAM Vcc_min, electrical fuse, and analogue performance have also been achieved which proves the manufacturability of this technology.

Low standby and low operating power transistors using SiON optimised with strain engineering and aggressive oxide thickness provide up to 25-40% speed improvement or 30-50% active power reduction over prior 45 nm technology.

“This development was achieved through close collaboration with customers who are pushing their own boundaries of new applications requiring 28 nm technology,” said Dr. Jack Sun, Vice President R&D at TSMC. “We continue this quest to support the most advanced applications being designed by the innovators in the semiconductor industry,” he said.

In the previous announcement made in September 2008, TSMC plans to deliver its 28 nm process in early 2010 as a full node technology offering options of power efficient, high performance and lower power technologies. TSMC is now on track to deliver 28 nm technology platforms to its customers.


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