SiC-Based MOSFETs & SBDs Now Supplied in TSPAK Packages

13 June 2024

Based on silicon carbide (SiC) technology, the MOSFET and Schottky barrier diode (SBD) devices from WeEn Semiconductors can now be sourced in TSPAK packaging.

This means that the company will be even better positioned to attend to customer applications where high power densities are required - such as the on-board chargers (OBCs) of electric vehicles (EVs), EV charging infrastructure, solar inverters, etc. These MOSFETs and SBDs benefit from a highly effective top-side cooling arrangement, which boosts heat dissipation (exhibiting an increase in junction-ambient thermal resistance of 19% compared with the previous offering). They come in 650V, 750V and 1200V rated versions. WeEn’s array of SiC modules has also been expanded. These units are intended for motor drives, energy storage system (ESS) implementations and industrial power installations.

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