Full-Bridge SiC-Based Power Modules Provide Heightened Voltage Headroom

19 February 2024

Continuously striving for ever greater product quality, through stringent testing and extensive screening, SemiQ has just introduced its latest performance-enhanced silicon-carbide (SiC) MOSFET modules. These further push the performance envelope - so that OEMs specifying them are able to benefit from markedly differentiated characteristics.

The new high-density full-bridge configuration QSiC modules provide greater operational margins. The company will be demonstrating them at its stand (#2245) during the Applied Power Electronics Conference (APEC) - which takes place from 25th to 29th February, in Long Beach, California. Though rated up to 1200V, the modules have been tested to breakdown voltages that surpass 1400V. Consequently, there is plenty of scope beyond their ratings to squeeze more out of the power system designs they are employed in. Their on-resistance (RDSon) values are just 20mOhm on some models, resulted in minimal power losses being exhibited. Key applications include the inverters used in renewable energy generation installations, as well as the powertrains and charging infrastructure associated with electric vehicles (EVs). Depending on the scenario, efficiency levels exceeding 98% can be attained. Junction temperatures of as much as 175°C are supported. The high temperature reverse bias reliability (HTRB) figure is 54 million hours, so prolonged working lifespans are assured.

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