30V-Rated N-Channel MOSFETs for High Density Power System Implementations

15 February 2024

The Vishay SiSD5300DN MOSFETs are optimised for use in secondary rectification circuitry, DC/DC converters, active clamp battery management system (BMS) implementations, motor drives and load switches.

These 30V-rated N-channel power discretes make use of the company’s proprietary TrenchFET topology. They exhibit a 0.71mOhm on-resistance (RDSon) at 10V, a 27nC (typical) gate charge (Qg) and a thermal resistance of 56 °C/W. Thanks to these properties, power losses are kept to minimal levels and operational efficiency is accentuated. They are supplied in a PowerPAK 1212-F package format (with a space-saving 3.3mm x 3.3mm footprint). An operational temperature range of -55°C to +150°C is supported.


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