Highly Efficient 1200V SiC Modules Accentuate Power System Performance Capabilities

15 November 2023

Disruptive silicon carbide (SiC) solutions provider SemiQ has further extended its QSiC power module offering - by introducing a family of 1200V MOSFETs that can be paired with or without accompanying 1200V SiC Schottky diodes.

Supplied in SOT-227 packages (with a 38mm x 25.2mm footprint), these compact and performance-enriched units are applicable in renewable energy generation, electric vehicle (EV) charging, energy storage system (ESS), data centre back-up power installation and medical contexts - enabling high power density implementations and keeping dynamic/static losses to a minimum. They feature typical on-resistance (Rdson) values going down to 20mOhm (with very little drift over temperature). Furthermore, they exhibit industry-leading gate oxide stability and lifespan, plus prolonged short-circuit withstand times. These modules are also robust enough to cope with 175°C operational temperature levels and have voltage breakdown characteristics exceeding 1400V. So that elevated quality benchmarks are met, comprehensive burn-in and stress testing activities are carried out prior to shipment.

According to SemiQ’s President, Dr. Timothy Han; “We are delighted with the customer input and needs for our new family of QSiC high-power modules and thank our SemiQ team who have worked tirelessly to build and qualify our latest QSiC modules.”

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