Mitsubishi Electric Establishes WBG MOSFET Partnership with Nexperia
15 November 2023
Adding a further proof point to its leadership position in wide bandgap technology, Nexperia has forged a strategic relationship with Mitsubishi Electric to work together on the development of power discretes based upon silicon carbide (SiC).
The SiC MOSFETs derived from this collaboration will help customers to implement far more efficient power systems. and help bring WBG into the mainstream.
“This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia’s silicon carbide journey,” Mark Roeloffzen, SVP of Nexperia’s Business Group for Bipolar Discretes, comments. “Mitsubishi Electric has a strong track record as a supplier of technically proven SiC devices and modules. Combined with Nexperia’s high-quality standards and expertise in discrete products and packaging, we will certainly generate positive synergies between both companies - ultimately enabling our customers to deliver highly energy efficient products in the industrial, automotive or consumer markets they serve.”
“Nexperia is a leading company in the industry with proven technology in high quality discrete semiconductors. We are delighted to have reached an agreement on a partnership for joint development that leverages the semiconductor technologies of both companies,” adds Dr. Masayoshi Takemi, Group President for Semiconductors & Devices at Mitsubishi Electric.
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