650V-Rated SiC Schottky Barrier Diodes Address Industrial Use Cases

02 August 2023

12 new 650V Schottky barrier diodes (SBDs) have just been released by Toshiba. The TRSxxx65H series devices are based on the company’s latest 3rd generation silicon carbide (SiC) technology.

These SBDs are designed to meet the requirements of industrial equipment where efficiency levels are paramount- such as switching power supplies, electric vehicle (EV) charging infrastructure and solar inverters. Depending upon the device, they are supplied in either TO-220-2L or DFN8×8 SMD packages. The low forward voltage of 1.2V (typical) is a 17% reduction on the previous generation devices. Furthermore, the trade-offs between forward voltage and total capacitive charge are also enhanced compared to the prior generation, as well as the forward voltage to reverse current ratio. 


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