Collaboration Between NXP & TSMC Results in Industry’s First Automobile-Compliant 16nm FinFET Embedded MRAM

23 May 2023

NXP Semiconductors has jointly developed embedded MRAM IP with TSMC.

Intended for integration into the semiconductor vendor’s high-performance S32 automotive-grade zonal processors, it uses the foundry’s 16nm FinFET process technology. The embedded MRAM solution will have a pivotal role to play in the upcoming transition to software-defined vehicles (SDVs). It will enable updating of 20MB of code in around 3s, compared to flash memories that take about 60s - thereby minimising the downtime that software updates cause.

“The innovators at NXP have always been quick to recognise the potential of TSMC’s new process technologies, especially for demanding automotive applications,” states Dr. Kevin Zhang, SVP of Business Development at TSMC. “We’re excited to see our leading MRAM technology employed in NXP’s S32 platform to enable the coming generation of software-defined vehicles.”

“NXP’s successful collaboration with TSMC spans decades and has consistently delivered high quality embedded memory technology to the automotive market,” adds Henri Ardevol, NXP’s EVP of Automotive Processing. “MRAM is a breakthrough addition to NXP’s S32 automotive solution portfolio supporting next-generation vehicle architectures.” 

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