Collaboration Between NXP & TSMC Results in Industry’s First Automobile-Compliant 16nm FinFET Embedded MRAM

23 May 2023

NXP Semiconductors has jointly developed embedded MRAM IP with TSMC.

Intended for integration into the semiconductor vendor’s high-performance S32 automotive-grade zonal processors, it uses the foundry’s 16nm FinFET process technology. The embedded MRAM solution will have a pivotal role to play in the upcoming transition to software-defined vehicles (SDVs). It will enable updating of 20MB of code in around 3s, compared to flash memories that take about 60s - thereby minimising the downtime that software updates cause.

“The innovators at NXP have always been quick to recognise the potential of TSMC’s new process technologies, especially for demanding automotive applications,” states Dr. Kevin Zhang, SVP of Business Development at TSMC. “We’re excited to see our leading MRAM technology employed in NXP’s S32 platform to enable the coming generation of software-defined vehicles.”

“NXP’s successful collaboration with TSMC spans decades and has consistently delivered high quality embedded memory technology to the automotive market,” adds Henri Ardevol, NXP’s EVP of Automotive Processing. “MRAM is a breakthrough addition to NXP’s S32 automotive solution portfolio supporting next-generation vehicle architectures.” 


Print this page | E-mail this page






This website uses cookies primarily for visitor analytics. Certain pages will ask you to fill in contact details to receive additional information. On these pages you have the option of having the site log your details for future visits. Indicating you want the site to remember your details will place a cookie on your device. To view our full cookie policy, please click here. You can also view it at any time by going to our Contact Us page.