High-Density PFC Proof-of-Concept Shows Shape of Things to Come

As well as SiC MOSFETs, SiC-CUBE also comprises Schottky barrier diodes and smart gate drivers. Enabling a modular approach, it acts as a foundation on to which additional hardware may be connected. The upshot is accelerated construction of power systems with elevated efficiency, while simultaneously curbing the associated bill-of-materials costs. Target applications for this unit will be electric vehicle (EV) charging equipment and renewable energy systems. With 140mm x 140mm x 210mm dimensions, the SiC-CUBE platform attains excellent power density levels. The 3-level configuration employed keeps down the voltage swing across each of the MOSFETs incorporated. Consequently, the magnitude of power losses experienced is reduced.