Toshiba starts construction of Fab 6 and Memory R&D Centre
10 February 2017
Toshiba began construction of a state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D centre, the Memory R&D Centre in Japan.
Fab 6 will be dedicated to production of BiCS FLASH, Toshiba’s innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Centre adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH™ and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.
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