Three new SDRAMs
17 April 2012
CMOS SDRAMs are rated for the industrial temperature range of –40°C to +85°C.
Alliance Memory has introduced three new high-speed CMOS synchronous DRAMs (SDRAM) rated for the industrial temperature range. The SDRs offer densities of 64 Mb (AS4C4M16S-6TIN), 128 Mb (AS4C8M16S-6TIN), and 256 Mb (AS4C16M16S-6TIN).
The devices are optimised for high-temperature industrial applications, in addition to high-performance PC, communications, medical, and consumer products requiring high memory bandwidth.
Packaged in a 54-pin, 400-mil plastic TSOP II, the new AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates of 166 MHz. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb)- and halogen-free.
Alliance Memory's SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Samples and production quantities of the new SDRs are available now with lead times of six to eight weeks.